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Andrea Giaccherini     Post Doctoral Researcher 
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Andrea Giaccherini published an article in September 2018.
Top co-authors See all
Francesco Vizza

183 shared publications

ICCOM-CNR

Alberto Martinelli

97 shared publications

SPIN, Consiglio Nazionale delle Richerche - Istituto Superconduttori Materiali Innovativie Dispositivi, Corso Perrone 24, 16152 Genova, Genova, ITALY

Alessandro Lavacchi

83 shared publications

Institute for the Chemistry of Organometallic Compounds, Italian National Council for Research, 50019 Florence, Italy

Fabio Bernardini

69 shared publications

Department of Physics, University of Cagliari, Cittadella Universitaria, Monserrato, I-09042 Italy

Francesco Di Benedetto

67 shared publications

Department of Earth Sciences, University of Florence, Via La Pira 4, Firenze, 50121, Italy

15
Publications
34
Reads
8
Downloads
11
Citations
Publication Record
Distribution of Articles published per year 
(2016 - 2018)
Total number of journals
published in
 
13
 
Publications See all
Article 1 Read 0 Citations Effect of Electrode Shape and Flow Conditions on the Electrochemical Detection with Band Microelectrodes Maher Al Khatib, Marco Bellini, Rebecca Pogni, Andrea Giacch... Published: 21 September 2018
Sensors, doi: 10.3390/s18103196
DOI See at publisher website ABS Show/hide abstract
In this work, we report the analysis of the electrochemical detection of electroactive species with band microelectrodes that operate under controlled convection. The study focuses on the determination of the collection efficiency of the analyte as a function of inlet flow velocity and microband geometry (inlaid, bumped and recessed), also providing a straightforward method for the theoretical determination of the lower detection limit. The analysis has been carried out by simulating the dimensionless mass transport with the finite element method, delivering the stationary limiting current density. Simulations have been performed on systems consisting of single and double band electrodes to investigate the trail effect on the electrochemical detection. We show that the obtained dimensionless results can be easily turned into dimensional data, providing a tool for the design of devices. The proposed method is general and can easily be extended to systems with different geometry.
Article 1 Read 0 Citations The puzzling structure of Cu5FeS4 (bornite) at low temperature Alberto Martinelli, Giovanni Orazio Lepore, Fabio Bernardini... Published: 23 August 2018
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials, doi: 10.1107/s2052520618009812
DOI See at publisher website
Article 0 Reads 0 Citations Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the... Walter Giurlani, Andrea Giaccherini, Nicola Calisi, Giovanni... Published: 14 August 2018
Materials, doi: 10.3390/ma11081426
DOI See at publisher website ABS Show/hide abstract
The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.
CONFERENCE-ARTICLE 28 Reads 0 Citations <strong>Investigations on the Electrochemical Atomic Layer Growth of Bi<sub>2</sub>Se<sub>3</sub> and the Surface Limite... Walter Giurlani, Andrea Giaccherini, Nicola Calisi, Giovanni... Published: 21 May 2018
The 3rd International Electronic Conference on Materials Sciences, doi: 10.3390/ecms2018-05242
DOI See at publisher website ABS Show/hide abstract

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin film of bismuth (Bi) compounds. Exploiting the E-ALD it was possible to obtain high controlled nanostructured depositions as needed for the application of these materials for novel electronics (topological insulators) and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with the X-ray Photoelectron Spectroscopy (XPS) emerged that, after the first monolayer, the deposition of Se is stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. Then we move to discover the optimal conditions to deposit a single monolayer of metallic Bi directly on Ag.

BOOK-CHAPTER 2 Reads 0 Citations E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals Emanuele Salvietti, Andrea Giaccherini, Filippo Gambinossi, ... Published: 07 March 2018
Semiconductors - Growth and Characterization, doi: 10.5772/intechopen.71014
DOI See at publisher website
Article 3 Reads 1 Citation Thermochemistry of the E-ALD process for the growth of Cu x Zn y S on Ag(111): Interpretation of experimental data Andrea Giaccherini, Giordano Montegrossi, Francesco Di Bened... Published: 01 February 2018
Electrochimica Acta, doi: 10.1016/j.electacta.2017.12.171
DOI See at publisher website
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