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Andrea Giaccherini     Post Doctoral Researcher 
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Andrea Giaccherini published an article in February 2019.
Top co-authors See all
Francesco Vizza

197 shared publications

National Research Council of Italy CNR-ICCOM – Via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy

Nicoletta DiTaranto

160 shared publications

Department of Chemistry, Università degli Studi di Bari “Aldo Moro”, via Orabona 4, 70125 Bari, Italy

Ugo Bardi

152 shared publications

Department of Chemistry, Universita degli Studi di Firenze, Firenze, Italy

M. Innocenti

133 shared publications

Dipartimento di Chimica, Università degli Studi di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino (FI), Italy

Alessandro Lavacchi

112 shared publications

Consiglio Nazionale delle Ricerche—Istituto di Chimica dei Composti OrganoMetallici (CNR-ICCOM), via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy

20
Publications
39
Reads
9
Downloads
15
Citations
Publication Record
Distribution of Articles published per year 
(2014 - 2019)
Total number of journals
published in
 
16
 
Publications See all
Article 0 Reads 0 Citations Sustainable synthesis of quaternary sulphides: The problem of the uptake of zinc in CZTS Andrea Giaccherini, Adhara Baldassarre, Lorenzo Donini, Giov... Published: 01 February 2019
Journal of Alloys and Compounds, doi: 10.1016/j.jallcom.2018.10.201
DOI See at publisher website
Article 0 Reads 0 Citations Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method Martina Vizza, Andrea Giaccherini, Walter Giurlani, Maurizio... Published: 24 January 2019
Metals, doi: 10.3390/met9020122
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This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.
Article 2 Reads 1 Citation Effect of Electrode Shape and Flow Conditions on the Electrochemical Detection with Band Microelectrodes Maher Al Khatib, Marco Bellini, Rebecca Pogni, Andrea Giacch... Published: 21 September 2018
Sensors, doi: 10.3390/s18103196
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In this work, we report the analysis of the electrochemical detection of electroactive species with band microelectrodes that operate under controlled convection. The study focuses on the determination of the collection efficiency of the analyte as a function of inlet flow velocity and microband geometry (inlaid, bumped and recessed), also providing a straightforward method for the theoretical determination of the lower detection limit. The analysis has been carried out by simulating the dimensionless mass transport with the finite element method, delivering the stationary limiting current density. Simulations have been performed on systems consisting of single and double band electrodes to investigate the trail effect on the electrochemical detection. We show that the obtained dimensionless results can be easily turned into dimensional data, providing a tool for the design of devices. The proposed method is general and can easily be extended to systems with different geometry.
Article 1 Read 0 Citations The puzzling structure of Cu5FeS4 (bornite) at low temperature Alberto Martinelli, Giovanni Orazio Lepore, Fabio Bernardini... Published: 23 August 2018
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials, doi: 10.1107/s2052520618009812
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Article 0 Reads 0 Citations Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the... Walter Giurlani, Andrea Giaccherini, Nicola Calisi, Giovanni... Published: 14 August 2018
Materials, doi: 10.3390/ma11081426
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The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.
Article 0 Reads 1 Citation Selective Electrodesorption-Based Atomic Layer Deposition (SEBALD) of Bismuth under Morphological Control Walter Giurlani, Andrea Giaccherini, Emanuele Salvietti, Mau... Published: 02 July 2018
The Electrochemical Society Interface, doi: 10.1149/2.f08182if
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Bismuth thin films are a promising material for the technological development of new generation electronic devices. Bismuth results to be a topological insulator material with exceptional surface-state spin and valley properties suitable for spintronics, valleytronics, and quantum computing applications. In this study we present an application of Selective Electrodesorption Based Atomic Layer Deposition (SEBALD) for the synthesis of high crystallinity bismuth metal thin films through the alternating controlled deposition of selenium and bismuth on a monocrystalline silver (111) electrode. The following selective removal of selenium allows the formation of a high crystalline bismuth deposit. Now a Days bismuth ultra-thin films are obtained by vapor phase techniques or from aqueous solution containing organic additives. In most cases, these processes lead to a film with uncontrolled morphology and flat polycrystalline films. Here we explore the possibility to use the Electrochemical Atomic Layer Deposition (E-ALD) to deposit highly ordered ultrathin films from diluted aqueous solutions at room temperature and pressure.
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